microwave power gaas fet microwave semiconductor TIM5964-35SLA-422 technical data features ? low intermodulation distortion ? high gain im3=-45 dbc at po= 35.0dbm, g1db=8.0db(min.) at 5.85ghz to 6.75ghz single carrier level ? broad band internally matched fet ? high power ? hermetically sealed package p1db=45.5dbm at 5.85ghz to 6.75ghz rf performance specifications ( ta= 25 c ) characteristics symbol conditions unit min. typ. max. output power at 1db gain compression point p 1db dbm 45.0 45.5 ? power gain at 1db gain compression point g 1db db 8.0 ? ? drain current i ds1 a ? 8.0 9.0 gain flatness g db ? ? 0.8 power added efficiency add v ds =10 v f = 5.85 to 6.75ghz % ? 39 ? 3rd order intermodulation distortion im 3 dbc -42 -45 ? drain current i ds2 two-tone test po=35.0dbm (single carrier level) a ? 8.0 9.0 channel temperature rise tch (vds x ids + pin ? p1db) x rth(c-c) c ? ? 100 recommended gate resistance(rg) : rg= 28 ?(max.) electrical characteristics ( ta= 25 c ) characteristics symbol conditions unit min. typ. max. transconductance gm v ds = 3v i ds = 10.5a ms ? 6500 ? pinch-off voltage v gsoff v ds = 3v i ds = 140ma v -1.0 -2.5 -4.0 saturated drain current i dss v ds = 3v v gs = 0v a ? 20 ? gate-source breakdown voltage v gso i gs = -420 a v -5 ? ? thermal resistance r th(c-c) channel to case c/w ? 1.0 1.3 ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may results from its use, no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. the information contained herein is subjec t to change without prior notice. it is therefor advisable to contact toshiba before proceeding with design of equipment incorporating this product. rev. jul. 2006
2 TIM5964-35SLA-422 absolute maximum ratings ( ta= 25 c ) characteristics symbol unit rating drain-source voltage v ds v 15 gate-source voltage v gs v -5 drain current i ds a 20.0 total power dissipation (tc= 25 c) p t w 115.4 channel temperature t ch c 175 storage t stg c -65 to +175 package outline (2-16g1b) unit in mm (1) gate (2) source (3) drain handling precautions for package model soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 c.
3 TIM5964-35SLA-422 rf performance 6.25 6.50 6.75 output power vs. frequency frequency (ghz) 48 v ds = 10 v i ds ? 8 a pin= 36.5 dbm 47 ) dbm 45 46 ( po 44 43 5.75 6.00 39 40 41 42 43 44 45 46 47 48 29 31 33 35 37 39 10 20 30 40 50 60 70 80 90 100 f=6.75 ghz v ds = 10 v i ds ? 8 a output power vs. input power pin(dbm) po(dbm) add(%) po add
4 TIM5964-35SLA-422 0 20 40 60 80 100 120 0 40 80 120 160 200 power dissipation vs. case temperature tc( c) p t (w) -60 -50 -40 -30 -20 -10 30 32 34 36 38 40 v ds = 10 v i ds ? 8 a f= 6.75ghz f= 5mhz im3 vs. output po wer characteristics po(dbm), single carrier level im3(dbc)
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